APT38F80B2
Microchip Technology
Microchip Technology
MOSFET N-CH 800V 41A T-MAX
$19.14
Available to order
Reference Price (USD)
30+
$16.47367
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose APT38F80B2 by Microchip Technology. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with APT38F80B2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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