FDP5N50NZ
onsemi
onsemi
MOSFET N-CH 500V 4.5A TO220-3
$1.46
Available to order
Reference Price (USD)
1+
$1.32000
10+
$1.16800
100+
$0.92300
500+
$0.71582
1,000+
$0.56513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance FDP5N50NZ from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FDP5N50NZ delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPB019N08N3GATMA1
Rohm Semiconductor
RJ1U330AAFRGTL
Infineon Technologies
IPW60R040CFD7XKSA1
Toshiba Semiconductor and Storage
TK290A60Y,S4X
onsemi
HUF75345P3
onsemi
NDF08N50ZG
Infineon Technologies
IPD65R660CFD
Micro Commercial Co
MCU80N06-TP
NXP USA Inc.
BUK9505-30A,127
NXP Semiconductors