STP36NF06L
STMicroelectronics
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
$1.62
Available to order
Reference Price (USD)
1+
$1.62000
50+
$1.29360
100+
$1.13190
500+
$0.87780
1,000+
$0.69300
2,500+
$0.64680
5,000+
$0.61446
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover STP36NF06L, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
FDP5N50NZ
Infineon Technologies
IPB019N08N3GATMA1
Rohm Semiconductor
RJ1U330AAFRGTL
Infineon Technologies
IPW60R040CFD7XKSA1
Toshiba Semiconductor and Storage
TK290A60Y,S4X
onsemi
HUF75345P3
onsemi
NDF08N50ZG
Infineon Technologies
IPD65R660CFD
Micro Commercial Co
MCU80N06-TP
NXP USA Inc.