FCP16N60
onsemi
onsemi
MOSFET N-CH 600V 16A TO220-3
$3.22
Available to order
Reference Price (USD)
1+
$3.41000
10+
$3.04200
100+
$2.49400
500+
$2.01956
1,000+
$1.70324
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FCP16N60, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FCP16N60 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
IXYS
IXFA16N50P
Renesas Electronics America Inc
2SK3570-ZK-E1-AZ
Central Semiconductor Corp
CDM4-650 TR13 PBFREE
GaNPower
GPI65030DFN
onsemi
FGD3050G2
Infineon Technologies
IPP80P03P4L04AKSA1
Infineon Technologies
BSC016N03LSGATMA1
Rohm Semiconductor
R5011FNJTL
Infineon Technologies
IRFHM8326TRPBF
Infineon Technologies