ZXMN2A14FTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 3.4A SOT23-3
$0.63
Available to order
Reference Price (USD)
3,000+
$0.23813
6,000+
$0.22438
15,000+
$0.21063
30,000+
$0.20100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents ZXMN2A14FTA, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, ZXMN2A14FTA delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Toshiba Semiconductor and Storage
TK35E08N1,S1X
onsemi
NVTFWS014P04M8LTAG
Infineon Technologies
IPS80R2K0P7AKMA1
Infineon Technologies
IPN70R2K0P7SATMA1
Texas Instruments
CSD18532NQ5B
STMicroelectronics
STL115N10F7AG
Fairchild Semiconductor
FCPF11N65
Fairchild Semiconductor
FQB6N70TM
Vishay Siliconix
IRFZ44SPBF
Panjit International Inc.