PJP4NA50A_T0_00001
Panjit International Inc.
Panjit International Inc.
500V N-CHANNEL MOSFET
$0.88
Available to order
Reference Price (USD)
1+
$0.88000
500+
$0.8712
1000+
$0.8624
1500+
$0.8536
2000+
$0.8448
2500+
$0.836
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Panjit International Inc. presents PJP4NA50A_T0_00001, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PJP4NA50A_T0_00001 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
IRFR014PBF-BE3
Vishay Siliconix
SQJ409EP-T1_BE3
Panjit International Inc.
PJC7407_R1_00001
onsemi
NTMFS5C682NLT1G
IXYS
IXTT48P20P
onsemi
FDMC2523P
onsemi
FQT3P20TF
NXP Semiconductors
BUK664R4-55C,118
onsemi
3LN01SS-TL-E
Vishay Siliconix