ZXMN10A08E6QTA
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V SOT26 T&R
$0.39
Available to order
Reference Price (USD)
1+
$0.39173
500+
$0.3878127
1000+
$0.3838954
1500+
$0.3799781
2000+
$0.3760608
2500+
$0.3721435
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose ZXMN10A08E6QTA by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with ZXMN10A08E6QTA inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
Related Products
NXP USA Inc.
PMCM650VNEZ
Renesas Electronics America Inc
2SK1290-AZ
onsemi
FQPF2N60C
Infineon Technologies
IRLHS6342TRPBF
Vishay Siliconix
SQA405CEJW-T1_GE3
Vishay Siliconix
SQJ456EP-T1_GE3
Diodes Incorporated
DMP31D7LT-13
STMicroelectronics
STI14NM50N
Vishay Siliconix
SIHFU310-GE3
Vishay Siliconix