PMCM650VNEZ
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 12V 6.4A 6WLCSP
$1.01
Available to order
Reference Price (USD)
1+
$1.01000
500+
$0.9999
1000+
$0.9898
1500+
$0.9797
2000+
$0.9696
2500+
$0.9595
Exquisite packaging
Discount
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NXP USA Inc. presents PMCM650VNEZ, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PMCM650VNEZ delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WLCSP (1.48x0.98)
- Package / Case: 6-XFBGA, WLCSP
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