ZXMHN6A07T8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 4N-CH 60V 1.4A SM8
$0.00
Available to order
Reference Price (USD)
1,000+
$2.52000
Exquisite packaging
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Experience the next level of semiconductor technology with Diodes Incorporated s ZXMHN6A07T8TA, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for ZXMHN6A07T8TA.
Specifications
- Product Status: Obsolete
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.4A
- Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
- Power - Max: 1.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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