PMWD19UN,518
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 30V 5.6A 8TSSOP
$0.00
Available to order
Reference Price (USD)
5,000+
$0.33600
Exquisite packaging
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Discover high-performance PMWD19UN,518 from NXP USA Inc., a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let NXP USA Inc. s PMWD19UN,518 enhance your projects with superior quality and performance.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.6A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
- Power - Max: 2.3W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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