WNSC6D16650B6J
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE I
$4.54
Available to order
Reference Price (USD)
1+
$4.54000
500+
$4.4946
1000+
$4.4492
1500+
$4.4038
2000+
$4.3584
2500+
$4.313
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with WeEn Semiconductors's WNSC6D16650B6J Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. WeEn Semiconductors provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 80 µA @ 650 V
- Capacitance @ Vr, F: 780pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: 175°C
Related Products
Solid State Inc.
70HFR10
Micro Commercial Co
SK36A-TP
Global Power Technology-GPT
G5S12005D
Semtech Corporation
JAN1N3644
Central Semiconductor Corp
1N5817 TR PBFREE
Microchip Technology
1N6677UR-1/TR
Taiwan Semiconductor Corporation
HS1KL R3G
Micro Commercial Co
SK15-TP (SMBSR105)
Rohm Semiconductor
RB521VM-30FHTE-17
Nexperia USA Inc.