Shopping cart

Subtotal: $0.00

HS1KL R3G

Taiwan Semiconductor Corporation
HS1KL R3G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
$0.23
Available to order
Reference Price (USD)
1+
$0.22540
500+
$0.223146
1000+
$0.220892
1500+
$0.218638
2000+
$0.216384
2500+
$0.21413
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Micro Commercial Co

SK15-TP (SMBSR105)

Rohm Semiconductor

RB521VM-30FHTE-17

Nexperia USA Inc.

PMEG2010AEJ,115

Vishay General Semiconductor - Diodes Division

ES3B-E3/57T

Taiwan Semiconductor Corporation

HS3G-K M6G

Vishay General Semiconductor - Diodes Division

SB540-E3/54

Microchip Technology

JAN1N5614

NTE Electronics, Inc

NTE6007

Vishay General Semiconductor - Diodes Division

VS-15AWL06FN-M3

Vishay General Semiconductor - Diodes Division

SS8PH9HM3_A/I

Top