VS-GT120DA65U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 650V 167A 577W SOT227
$0.00
Available to order
Reference Price (USD)
160+
$22.80000
Exquisite packaging
Discount
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Discover high-performance VS-GT120DA65U IGBT Modules from Vishay General Semiconductor - Diodes Division, designed for robust power management in industrial applications. These modules feature advanced thermal management, high voltage tolerance, and efficient switching capabilities, making them ideal for motor drives, renewable energy systems, and power supplies. Upgrade your systems with reliable Vishay General Semiconductor - Diodes Division technology. Contact us today for a quote!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 167 A
- Power - Max: 577 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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