CPV363M4U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 13A 36W IMS-2
$0.00
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Reference Price (USD)
160+
$29.78013
Exquisite packaging
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Vishay General Semiconductor - Diodes Division's CPV363M4U IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 13 A
- Power - Max: 36 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 13A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.1 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 19-SIP (13 Leads), IMS-2
- Supplier Device Package: IMS-2
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