VS-GT100TP120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 180A INT-A-PAK
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The VS-GT100TP120N IGBT Module from Vishay General Semiconductor - Diodes Division delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Vishay General Semiconductor - Diodes Division for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 180 A
- Power - Max: 652 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 12.8 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
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