GB35XF120K
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 50A 284W
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The GB35XF120K IGBT Module from Vishay General Semiconductor - Diodes Division delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Vishay General Semiconductor - Diodes Division for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 284 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 3.475 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECONO2
- Supplier Device Package: -
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