Shopping cart

Subtotal: $0.00

VS-GB600AH120N

Vishay General Semiconductor - Diodes Division
VS-GB600AH120N Preview
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 910A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$248.98500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 910 A
  • Power - Max: 3125 W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A (Typ)
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 41 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (5)
  • Supplier Device Package: Double INT-A-PAK

Related Products

Microsemi Corporation

APTGT30DA170D1G

Infineon Technologies

IFS150V12PT4BOSA1

Powerex Inc.

CM50BU-24H

Vishay General Semiconductor - Diodes Division

VS-GB75TP120U

Microsemi Corporation

APTGT100A60TG

Infineon Technologies

MA13039695NDSA1

Microsemi Corporation

APTGF75DA120T1G

Powerex Inc.

CM50TU-24F

Infineon Technologies

PSDC317E5630533NOSA1

Powerex Inc.

CM50TF-12H

Top