VS-GB75TP120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 105A INT-A-PAK
$0.00
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Reference Price (USD)
24+
$80.99208
Exquisite packaging
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Achieve precision power control with Vishay General Semiconductor - Diodes Division's VS-GB75TP120U IGBT Module. Its rugged construction and high isolation voltage make it a top choice for marine propulsion and grid infrastructure. Features include solder-free assembly and RoHS compliance. Elevate your systems request a consultation today.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 105 A
- Power - Max: 500 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 75A (Typ)
- Current - Collector Cutoff (Max): 2 mA
- Input Capacitance (Cies) @ Vce: 4.3 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
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Vishay General Semiconductor - Diodes Division