VS-GB50YF120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 66A ECONO2 4PACK
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Reference Price (USD)
12+
$152.27417
Exquisite packaging
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Discover high-performance VS-GB50YF120N IGBT Modules from Vishay General Semiconductor - Diodes Division, designed for robust power management in industrial applications. These modules feature advanced thermal management, high voltage tolerance, and efficient switching capabilities, making them ideal for motor drives, renewable energy systems, and power supplies. Upgrade your systems with reliable Vishay General Semiconductor - Diodes Division technology. Contact us today for a quote!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 66 A
- Power - Max: 330 W
- Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ECONO2 4PACK
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