VS-100MT060WDF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 121A 462W MTP
$0.00
Available to order
Reference Price (USD)
105+
$62.09210
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize efficiency in your power electronics with the VS-100MT060WDF IGBT Module by Vishay General Semiconductor - Diodes Division. Perfect for elevators and conveyor systems, it features low switching losses and high noise immunity. Vishay General Semiconductor - Diodes Division leads in innovation contact us for expert support and competitive pricing.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 121 A
- Power - Max: 462 W
- Vce(on) (Max) @ Vge, Ic: 2.29V @ 15V, 60A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 16-MTP Module
- Supplier Device Package: MTP
Related Products
Infineon Technologies
FD1000R33HE3KBOSA1
onsemi
NXH350N100H4Q2F2PG
Infineon Technologies
FF800R17KF6CB2NOSA1
Microchip Technology
APTGF25X120T3G
Infineon Technologies
DDB6U180N16RR
Powerex Inc.
CM75TF-12H
Microsemi Corporation
APTGF75DA60D1G
Infineon Technologies
FF401R17KF6C_B2
Microsemi Corporation
APTGT100SK170D1G
onsemi