VS-GB300NH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 500A INT-A-PAK
$0.00
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Reference Price (USD)
12+
$158.34000
Exquisite packaging
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Vishay General Semiconductor - Diodes Division's VS-GB300NH120N IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Vishay General Semiconductor - Diodes Division for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 500 A
- Power - Max: 1645 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 21.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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