Shopping cart

Subtotal: $0.00

MIO1200-33E10

IXYS
MIO1200-33E10 Preview
IXYS
IGBT MODULE 3300V 1200A E10
$0.00
Available to order
Reference Price (USD)
1+
$1,633.91000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • IGBT Type: NPT
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 3300 V
  • Current - Collector (Ic) (Max): 1200 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1200A
  • Current - Collector Cutoff (Max): 120 mA
  • Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E10
  • Supplier Device Package: E10

Related Products

Infineon Technologies

IRG7U100HF12A

Infineon Technologies

IRG5U75HF12A

Powerex Inc.

QID1210006

Microsemi Corporation

APTGF50A120T1G

Microsemi Corporation

APTGT100DA170D1G

Microsemi Corporation

APTGT150DA120D1G

Microsemi Corporation

APTGT100DH60T3G

Top