VS-GB200TH120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 330A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$434.51000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve precision power control with Vishay General Semiconductor - Diodes Division's VS-GB200TH120U IGBT Module. Its rugged construction and high isolation voltage make it a top choice for marine propulsion and grid infrastructure. Features include solder-free assembly and RoHS compliance. Elevate your systems request a consultation today.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 330 A
- Power - Max: 1316 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
Related Products
Microsemi Corporation
APTGT25DA120D1G
Littelfuse Inc.
MG17300WB-BN4MM
Infineon Technologies
FS75R12KT4B15BOSA1
Microsemi Corporation
APTGV75H60T3G
IXYS
MIO1500-25E10
IXYS
IXGN50N60BD2
Powerex Inc.
CM150DY-34A
Vishay General Semiconductor - Diodes Division
VS-GB150YG120NT
IXYS
MWI225-17E9
Infineon Technologies