VS-GB150YG120NT
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 182A ECONO3 4PACK
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Boost your project's performance with the VS-GB150YG120NT IGBT Module by Vishay General Semiconductor - Diodes Division. Designed for harsh environments, it provides unmatched efficiency in railway systems, wind turbines, and more. Features like overcurrent protection ensure safety. Let Vishay General Semiconductor - Diodes Division power your innovations send your inquiry now!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 182 A
- Power - Max: 892 W
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 200A
- Current - Collector Cutoff (Max): 120 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ECONO3 4PACK
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