BSM100GB120DLCKHOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 100A 830W
$0.00
Available to order
Reference Price (USD)
10+
$90.98700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's BSM100GB120DLCKHOSA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 830 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Vishay General Semiconductor - Diodes Division
50MT060ULS
IXYS
MID400-12E4
Vishay General Semiconductor - Diodes Division
VS-GT400TH120N
IXYS
VII75-06P1
Vishay General Semiconductor - Diodes Division
VS-S1683
Powerex Inc.
CM100DY-24H
IXYS
MWI150-06A8T
Infineon Technologies
FS30R06XL4BOMA1
Powerex Inc.
CM100DU-12H
IXYS