VS-GB150TH120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 280A INT-A-PAK
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Reference Price (USD)
12+
$133.66167
Exquisite packaging
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Discover high-performance VS-GB150TH120U IGBT Modules from Vishay General Semiconductor - Diodes Division, designed for robust power management in industrial applications. These modules feature advanced thermal management, high voltage tolerance, and efficient switching capabilities, making them ideal for motor drives, renewable energy systems, and power supplies. Upgrade your systems with reliable Vishay General Semiconductor - Diodes Division technology. Contact us today for a quote!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 280 A
- Power - Max: 1147 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 12.7 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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