VS-GB100TH120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 200A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$329.28333
Exquisite packaging
Discount
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Boost your project's performance with the VS-GB100TH120U IGBT Module by Vishay General Semiconductor - Diodes Division. Designed for harsh environments, it provides unmatched efficiency in railway systems, wind turbines, and more. Features like overcurrent protection ensure safety. Let Vishay General Semiconductor - Diodes Division power your innovations send your inquiry now!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 1136 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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