VS-ETF150Y65U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 650V 142A EMIPAK-2B
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Reference Price (USD)
60+
$77.48883
Exquisite packaging
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Vishay General Semiconductor - Diodes Division's VS-ETF150Y65U IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Configuration: Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 142 A
- Power - Max: 417 W
- Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 6.6 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: EMIPAK-2B
- Supplier Device Package: EMIPAK-2B
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