VS-40MT120UHAPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 80A 463W MTP
$0.00
Available to order
Reference Price (USD)
1+
$103.76000
15+
$98.40000
30+
$95.72267
105+
$89.02876
Exquisite packaging
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Achieve precision power control with Vishay General Semiconductor - Diodes Division's VS-40MT120UHAPBF IGBT Module. Its rugged construction and high isolation voltage make it a top choice for marine propulsion and grid infrastructure. Features include solder-free assembly and RoHS compliance. Elevate your systems request a consultation today.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: 463 W
- Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.28 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 12-MTP Module
- Supplier Device Package: MTP
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