VS-GB400AH120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 550A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$162.51417
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay General Semiconductor - Diodes Division's VS-GB400AH120U IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Vishay General Semiconductor - Diodes Division for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 550 A
- Power - Max: 2841 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 33.7 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (5)
- Supplier Device Package: Double INT-A-PAK
Related Products
Microsemi Corporation
APTGF180DA60TG
Powerex Inc.
CM150DY-28H
Infineon Technologies
FZ1200R17KF6CB2NOSA1
Infineon Technologies
IRG5K75FF06E
Powerex Inc.
PP600T120
Infineon Technologies
FF300R06KE3_B2
Powerex Inc.
CM800HA-28H
Vishay General Semiconductor - Diodes Division
VS-GB150TS60NPBF
IXYS
MDI300-12A4
Infineon Technologies