VMO550-01F
IXYS
IXYS
MOSFET N-CH 100V 590A Y3-DCB
$366.29
Available to order
Reference Price (USD)
2+
$163.64500
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose VMO550-01F by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with VMO550-01F inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 590A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 6V @ 110mA
- Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2200W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Y3-DCB
- Package / Case: Y3-DCB
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