SCT2450KEGC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 10A, THD, SILICON-CARBIDE
$12.42
Available to order
Reference Price (USD)
1+
$12.42000
500+
$12.2958
1000+
$12.1716
1500+
$12.0474
2000+
$11.9232
2500+
$11.799
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SCT2450KEGC11, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SCT2450KEGC11 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMTH6002LPSW-13
onsemi
NTMFS10N3D2C
Diodes Incorporated
DMN68M7SCT
Micro Commercial Co
2N7002KWHE3-TP
Nexperia USA Inc.
BUK4D60-30X
Diodes Incorporated
DMN3018SFG-13
Diodes Incorporated
DMT68M8LPS-13
onsemi
NVHL110N65S3HF
Renesas Electronics America Inc
4AK17-91
Renesas Electronics America Inc