VMM650-01F
IXYS
IXYS
MOSFET 2N-CH 100V 680A Y3-LI
$361.19
Available to order
Reference Price (USD)
2+
$185.58500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic circuits with IXYS s VMM650-01F, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how VMM650-01F can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 680A
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 500A, 10V
- Vgs(th) (Max) @ Id: 4V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-Li
- Supplier Device Package: Y3-Li
Related Products
Diodes Incorporated
DMN2022UNS-7
Diodes Incorporated
DMP4047SSD-13
onsemi
ECH8697R-TL-W
Diodes Incorporated
DMN6040SSD-13
NXP USA Inc.
PMDPB70EN,115
Vishay Siliconix
SI1902DL-T1-GE3
Rohm Semiconductor
BSM120D12P2C005
Analog Devices Inc./Maxim Integrated
MAX8659ETL+
Panjit International Inc.
PJQ2800_R1_00001
Infineon Technologies