DMN2022UNS-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2 N-CH 20V POWERDI3333-8
$0.65
Available to order
Reference Price (USD)
2,000+
$0.26925
6,000+
$0.25275
10,000+
$0.24450
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN2022UNS-7 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMN2022UNS-7 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXB)
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