UPA1911ATE(0)-T1-A
Renesas
Renesas
UPA1911A - FIELD-EFFECT TRANSIST
$0.31
Available to order
Reference Price (USD)
1+
$0.31065
500+
$0.3075435
1000+
$0.304437
1500+
$0.3013305
2000+
$0.298224
2500+
$0.2951175
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose UPA1911ATE(0)-T1-A by Renesas. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with UPA1911ATE(0)-T1-A inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SC-95
- Package / Case: SC-95
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