MSC080SMA330B4
Microchip Technology
Microchip Technology
MOSFET SIC 3300 V 80 MOHM TO-247
$125.90
Available to order
Reference Price (USD)
1+
$125.90000
500+
$124.641
1000+
$123.382
1500+
$122.123
2000+
$120.864
2500+
$119.605
Exquisite packaging
Discount
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Boost your electronic applications with MSC080SMA330B4, a reliable Transistors - FETs, MOSFETs - Single by Microchip Technology. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, MSC080SMA330B4 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 30A, 20V
- Vgs(th) (Max) @ Id: 2.97V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 20 V
- Vgs (Max): +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3462 pF @ 2400 V
- FET Feature: -
- Power Dissipation (Max): 381W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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