UNR212100L
Panasonic Electronic Components
Panasonic Electronic Components
TRANS PREBIAS PNP 200MW MINI3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the UNR212100L from Panasonic Electronic Components for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. Panasonic Electronic Components is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G1
Related Products
onsemi
FJV4112RMTF
Panasonic Electronic Components
UNR211200L
Infineon Technologies
BCR 189F E6327
Infineon Technologies
BCR 129L3 E6327
NXP USA Inc.
PDTA144EK,115
Toshiba Semiconductor and Storage
RN1404S,LF
Panasonic Electronic Components
DRA5143X0L
Panasonic Electronic Components
UNR921CJ0L
Toshiba Semiconductor and Storage
RN1103ACT(TPL3)
Toshiba Semiconductor and Storage