RN1103ACT(TPL3)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.08A CST3
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The RN1103ACT(TPL3) by Toshiba Semiconductor and Storage is a high-performance solution in the Discrete Semiconductor Products sector. These Transistors - Bipolar (BJT) - Single, Pre-Biased are crafted for excellence, featuring high efficiency, low thermal resistance, and long lifespan. Perfect for use in power converters, lighting systems, and communication devices. Toshiba Semiconductor and Storage guarantees superior products and support. Get in touch today to explore our offerings!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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