UJ4C075023K4S
UnitedSiC
UnitedSiC
750V/23MOHM, SIC, CASCODE, G4, T
$16.45
Available to order
Reference Price (USD)
1+
$16.45000
500+
$16.2855
1000+
$16.121
1500+
$15.9565
2000+
$15.792
2500+
$15.6275
Exquisite packaging
Discount
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Experience the power of UJ4C075023K4S, a premium Transistors - FETs, MOSFETs - Single from UnitedSiC. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, UJ4C075023K4S is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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