SI4866DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 12V 11A 8SO
$1.17
Available to order
Reference Price (USD)
2,500+
$1.12535
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SI4866DY-T1-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI4866DY-T1-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Fairchild Semiconductor
FDMS8690
Vishay Siliconix
SIHP35N60E-BE3
Infineon Technologies
AUIRF3205Z
Vishay Siliconix
SI9407BDY-T1-GE3
Vishay Siliconix
SI7868ADP-T1-E3
Microchip Technology
TP2104K1-G
onsemi
NTA4153NT1G
Rohm Semiconductor
R6008FNX
Rohm Semiconductor
RS3E075ATTB1
onsemi