TSM8N80CI C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 800V 8A ITO220AB
$2.67
Available to order
Reference Price (USD)
1+
$2.94000
10+
$2.65200
100+
$2.13140
500+
$1.65778
1,000+
$1.37359
3,000+
$1.32622
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TSM8N80CI C0G, a reliable Transistors - FETs, MOSFETs - Single by Taiwan Semiconductor Corporation. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TSM8N80CI C0G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1921 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
onsemi
NDD03N80Z-1G
STMicroelectronics
STO67N60M6
IXYS Integrated Circuits Division
CPC3708CTR
Infineon Technologies
IPD90P03P4L04ATMA2
onsemi
NVD5C648NLT4G
Fairchild Semiconductor
FCU3400N80Z
onsemi
NVMFS5C404NAFT3G
onsemi
FQD12N20LTM
onsemi
NTMS4N01R2
Vishay Siliconix