NVD5C648NLT4G
onsemi
onsemi
MOSFET N-CH 60V 18A/89A DPAK
$1.44
Available to order
Reference Price (USD)
2,500+
$0.69316
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NVD5C648NLT4G by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NVD5C648NLT4G ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 72W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Fairchild Semiconductor
FCU3400N80Z
onsemi
NVMFS5C404NAFT3G
onsemi
FQD12N20LTM
onsemi
NTMS4N01R2
Vishay Siliconix
SIHG22N60EF-GE3
Infineon Technologies
IRFR7740TRPBF
Diotec Semiconductor
DIT095N08
Diodes Incorporated
DMN3009LFVW-7
Vishay Siliconix
SIHL630STRL-GE3
onsemi