TSM80N950CH C5G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 800V 6A TO251
$3.07
Available to order
Reference Price (USD)
1+
$1.66000
10+
$1.50000
100+
$1.20510
500+
$0.93730
1,875+
$0.77662
3,750+
$0.74984
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TSM80N950CH C5G, a reliable Transistors - FETs, MOSFETs - Single by Taiwan Semiconductor Corporation. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TSM80N950CH C5G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Diodes Incorporated
DMP2040UFDF-7
Fairchild Semiconductor
SSR4N60BTF
Rectron USA
RM50P40LD
Diodes Incorporated
ZXMN7A11GTA
Diodes Incorporated
2N7002W-7-F
Vishay Siliconix
SI5448DU-T1-GE3
Diodes Incorporated
DMP3028LFDE-7
Vishay Siliconix
SQ2325ES-T1_GE3
STMicroelectronics
STD4N52K3
onsemi