SQ2325ES-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 150V 840MA TO236
$0.72
Available to order
Reference Price (USD)
3,000+
$0.25992
6,000+
$0.24408
15,000+
$0.22824
30,000+
$0.21715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SQ2325ES-T1_GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SQ2325ES-T1_GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.77Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
STMicroelectronics
STD4N52K3
onsemi
HUF75639G3
STMicroelectronics
STH250N55F3-6
Infineon Technologies
IPA057N06N3GXKSA1
Vishay Siliconix
IRLU024PBF
onsemi
SFT1445-H
STMicroelectronics
STB42N65M5
Harris Corporation
RFL1N15L
IXYS
IXFP14N60P
Diodes Incorporated