TSM032NH04LCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
40V, 81A, SINGLE N-CHANNEL POWER
$4.01
Available to order
Reference Price (USD)
1+
$4.01000
500+
$3.9699
1000+
$3.9298
1500+
$3.8897
2000+
$3.8496
2500+
$3.8095
Exquisite packaging
Discount
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Upgrade your electronic designs with TSM032NH04LCR RLG by Taiwan Semiconductor Corporation, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, TSM032NH04LCR RLG ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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