IXTR36P15P
IXYS
IXYS
MOSFET P-CH 150V 22A ISOPLUS247
$9.57
Available to order
Reference Price (USD)
30+
$6.25267
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IXTR36P15P from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXTR36P15P delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMNH10H028SK3-13
onsemi
NVMFS5C466NLWFT1G
STMicroelectronics
STP20N65M5
STMicroelectronics
STP9N80K5
Renesas Electronics America Inc
UPA2709GR-E1-A
Nexperia USA Inc.
PSMN1R0-30YLC,115
Diodes Incorporated
DMG9N65CT
Microchip Technology
LND150N3-G
Diodes Incorporated
DMN2310UT-7
IXYS