TRS16N65FB,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SIC SBD TO-247 V=650 IF=12A
$6.50
Available to order
Reference Price (USD)
1+
$6.50000
500+
$6.435
1000+
$6.37
1500+
$6.305
2000+
$6.24
2500+
$6.175
Exquisite packaging
Discount
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Enhance your circuit designs with the TRS16N65FB,S1Q by Toshiba Semiconductor and Storage, a standout in the Diodes - Rectifiers - Arrays field under Discrete Semiconductor Products. These diodes are built to provide reliable rectification and array functionality, ensuring optimal performance in various settings. The TRS16N65FB,S1Q boasts low leakage current and high reverse voltage, making it a versatile component for multiple applications. Toshiba Semiconductor and Storage's commitment to excellence guarantees products you can trust. Contact us now for pricing and availability!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 650 V
- Operating Temperature - Junction: 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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