MBR60035CTR
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 35V 300A 2TOWER
$129.36
Available to order
Reference Price (USD)
25+
$96.34800
Exquisite packaging
Discount
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Choose the MBR60035CTR from GeneSiC Semiconductor for superior Diodes - Rectifiers - Arrays solutions within the Discrete Semiconductor Products range. These diodes are optimized for precision and durability, making them suitable for high-stakes applications. The MBR60035CTR features excellent thermal performance and high surge current tolerance, ensuring reliability in harsh environments. GeneSiC Semiconductor is a name you can trust for cutting-edge semiconductor technology. Don t hesitate contact us now for more information and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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