TPR1000A
Microsemi Corporation
Microsemi Corporation
RF TRANS 65V 1.09GHZ 55KV
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Maximize signal clarity with TPR1000A RF BJT transistors by Microsemi Corporation. Featuring low distortion and high linearity, these components are perfect for high-sensitivity applications like medical imaging equipment and military communications. Their compact design allows for easy integration without compromising performance. Don t miss out inquire now for bulk discounts and technical specifications!
Specifications
- Product Status: Obsolete
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6dB
- Power - Max: 2900W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 80A
- Operating Temperature: 200°C
- Mounting Type: Chassis Mount
- Package / Case: 55KV
- Supplier Device Package: 55KV
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