MS1006
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 55V 30MHZ M135
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Engineered for excellence, Microsemi Corporation's MS1006 transistors redefine RF performance in the Bipolar (BJT) category. Ideal for VHF/UHF systems, these devices provide exceptional gain-bandwidth product and phase stability. Applications span from broadcast transmitters to automotive radar. Partner with us for quality components contact our sales team for personalized assistance!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 30MHz
- Noise Figure (dB Typ @ f): -
- Gain: 14dB
- Power - Max: 127W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1.4A, 6V
- Current - Collector (Ic) (Max): 3.25A
- Operating Temperature: 200°C
- Mounting Type: Stud Mount
- Package / Case: M135
- Supplier Device Package: M135
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